Semiconductors

Transistors RF JFET GaAs Power MMIC

N CH MOSFET, 150V, 167A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:167A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. of Pins:3 ;RoHS Compliant: Yes

N CH POWER MOSFET, HEXFET, 40V, 380A, D2PAK-7; Transistor Polarity:N Channel; Continuous Drain Current Id:380A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V ;RoHS Compliant: No

TRIAC, 600V, 40A, TOP-3; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max (QI), Igt:100mA; On State RMS Current IT(rms):41A; Peak Non Rep Surge Current Itsm 50Hz:400A; Holding Current Max Ih:80mA; No. of Pins:3 ;RoHS Compliant: Yes

MOSFET, N CH, 100V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. of Pins:3 ;RoHS Compliant: Yes

TRANSISTOR, NPN, 50VDC, 0.8A, TO-206AA-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:500mW; DC Collector Current:800mA; DC Current Gain hFE:325; Operating Temperature Min:-65°C

P CH MOSFET, -55V, 75A, TO-220AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-75A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; No. of Pins:3 ;RoHS Compliant: Yes

PIN Diodes .02-2.7GHZ SPST 50W IL .3dB typ

PIN Diodes .9-4.0GHz SPDT 50W IL .4dB typ

PIN Diodes .9-4.0GHz SPDT 40W IL .3dB typ

PIN Diodes .05-2.7GHz 100W IL .4dB typ.

PIN Diodes .9-4.0GHz SPDT 100W IL .4dB typ

DARLINGTON TRANSISTOR, NPN, 450V, TO-247; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Power Dissipation Pd:200W; DC Collector Current:30A; Operating Temperature Max:150°C; No. of Pins:3; MSL:- ;RoHS Compliant: Yes

MOSFET, N CH, 600V, 47A, TO-3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. of Pins:3 ;RoHS Compliant: Yes

MOSFET UniFET 500V

Transistors RF MOSFET POWER RF Transistor

Transistors RF MOSFET 5-400MHz 30Watts 28Volt Gain 13dB

MOSFET N-Chan 100V 180 Amp

Transistors RF MOSFET 5-500MHz 20Watts 28Volt Gain 13.5dB

Transistors RF MOSFET 5-175MHz 150Watts 50Volt Gain 18dB

Transistors RF Bipolar 2-30MHz 150Watts 28Volt Gain 10dB

IGBT Modules 600V 75A DUAL

Transistors RF MOSFET 5-150MHz 150Watts 50Volt Gain 17dB

Schottky Diodes & Rectifiers SiC DLCC LIGHTWEIGHT SURFACE MOUNT

Transistors RF JFET .5-3GHz 10W 12Volts pHEMT

MOSFET,N CH,RF,1000W,250MHZ,STAC244B; Transistor Type:RF MOSFET; Drain Source Voltage Vds:200V; Continuous Drain Current Id:10A; Power Dissipation Pd:1.2kW; Operating Frequency Max:250MHz; RF Transistor Case:STAC244B; No. of Pins:4; ;RoHS Compliant: Yes

Transistors RF Bipolar 2-30MHz 250Watts 50Volt Gain 12dB

N CH VHF PUSH / PULL POWER VDMOS, 50V, 108MHZ - 225MHZ, 5-SOT-262A1; Transistor Type:RF MOSFET; Drain Source Voltage Vds:50V; Continuous Drain Current Id:18A; Power Dissipation Pd:500W; Operating Frequency Min:108MHz; No. of Pins:5 ;RoHS Compliant: Yes

Transistors RF MOSFET 5-175MHz 300Watts 28Volt Gain 12dB

IGBT Modules 1200V 600A SINGLE

Transistors RF JFET 1.2-2.0GHz 50Volt 100W Pk Gain 15.1dB

Schottky Diodes & Rectifiers High Current Schottky

Schottky Diodes & Rectifiers 100V 100mA Rec

BIPOLAR TRANSISTOR, NPN, 60V, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:60MHz; Power Dissipation Pd:360mW; DC Collector Current:50mA; DC Current Gain hFE:30; No. of Pins:3; MSL:- ;RoHS Compliant: Yes

Current Regulator Diodes 1.0mA Curr Reg

Transistors RF Bipolar RF Transistor

Schottky Diodes & Rectifiers 600V 10A FULL BRIDGE RECTIFIER CONFIG

SCHOTTKY RECTIFIER, 30mA, 40V DO-35; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):30mA; Forward Voltage VF Max:1V; Forward Surge Current Ifsm Max:500mA; MSL:- ;RoHS Compliant: Yes

Diodes - General Purpose, Power, Switching Vr/100V Io/10mA

Zener Diodes 3.9 Volt 0.5W 5%

DIODE, ZENER, 5.6V, 0.5W, DO-35; Zener Voltage Vz Typ:5.6V; Power Dissipation Pd:500mW; Operating Temperature Min:+175°C; Operating Temperature Max:-65°C; Diode Case Style:DO-35; No. of Pins:2; MSL:- ;RoHS Compliant: Yes

Zener Diodes 6.2 Volt 0.5W 5%

ZENER DIODE, 500mW, 10V, DO-35; Zener Voltage Vz Typ:10V; Power Dissipation Pd:500mW; Diode Case Style:DO-35; No. of Pins:2; MSL:-; Breakdown Voltage:10.6V; Diode Type:Zener; Leaded Process Compatible:No; Package / Case:DO-35 ;RoHS Compliant: Yes

Zener Diodes 13 Volt 0.5 Watt 5%

Zener Diodes 4.3 Volt 1.3 Watt 5%

Zener Diodes 27 Volt 0.5W 5%

Schottky Diodes & Rectifiers 30 Volt 200mA 4.0 Amp IFSM

BIPOLAR TRANSISTOR, NPN, 65V, 100MA, 3-SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:450 ;RoHS Compliant: Yes

Zener Diodes 8.2 Volt 0.5W 5%

Zener Diodes 6.8 Volt 0.5W 2%